BC817-16W Datasheet | Infineon

BC817W, BC818W NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage plementary types: BC807W, BC808W (PNP) 2 1 VSO05561 Type BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Symbol VCEO VCBO VEBO BC817W 45 50 5 500 1 100 200 250 150 BC818W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg m A A m A m W °C -65 ... 150 Thermal Resistance Junction - soldering point1) Rth JS 80 K/W 1For calculation of Rth JA please refer to Application Note Thermal Resistance Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 m A, VCE = 1 V h FE-grp.16 h FE-grp.25 h FE-grp.40 DC current gain 1) IC = 300 m A, VCE = 1 V h FE-grp.16 h FE-grp.25 h FE-grp.40 Collector-emitter saturation voltage1) IC = 500 m A, IB = 50 m A Base-emitter saturation voltage 1) IC = 500 m A, IB = 50 m A VBEsat VCEsat h FE h FE IEBO ICBO ICBO V(BR)CEO typ. max. Unit V 45 25 100 50 100 n A µA n A 100 160 250 160 250 350 250 400 630 BC817W BC818W V(BR)CBO...