BC848CT Datasheet | Infineon

BC846T...BC850T NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 k Hz plementary types: BC856T, BC857T, BC858T, BC859T, BC860T 2 1 VPS05996 Type BC846AT BC846BT BC847AT BC847BT BC847CT BC848AT BC848BT BC848CT BC849BT BC849CT BC850BT BC850CT Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2cs 2Fs 2Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 SC75 Aug-01-2002 BC846T...BC850T Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 m A, IB = 0 IC = 10 m A, IB = 0 IC = 10 m A, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 BC846T BC847T/BC850T BC848T/BC849T V(BR)CBO 80 50 30 BC846T BC847T/850T BC848T/849T V(BR)CEO 65 45 30 V Rth JS 165 Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846T 65 80 80 6 BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5 Unit V m A m A m W °C K/W Unit max. Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol min. Values typ. Collector-base breakdown voltage 1For calculation of R th JA please refer to Application Note Thermal Resistance Aug-01-2002 BC846T...BC850T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IC = 10 µA, VBE = 0 IE = 1 µA, IC = 0 IE = 1 µA, IC = 0 IE = 1 µA,...