BDP947 Description
BDP947, BDP949 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage plementary types: 150 Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note 1 Aug-06-2001 BDP947, BDP949 at TA = 25°C, unless otherwise specified. Symbol Values Parameter min.