BDP956 Description
BDP952...BDP956 PNP Silicon AF Power Transistors For AF driver and output stages High current gain Low collector-emitter saturation voltage plementary types: 150 A mA W °C Junction - soldering point1) 17 K/W 1For calculation of R thJA please refer to Application Note 1 Jul-06-2001 BDP952...BDP956 at TA = 25°C, unless otherwise specified. Parameter Symbol Values min.