BDP956
BDP952...BDP956
PNP Silicon AF Power Transistors
For AF driver and output stages High current gain Low collector-emitter saturation voltage plementary types: BDP951...BDP955 (NPN)
3 2 1
VPS05163
Type BDP952 BDP954 BDP956
Maximum Ratings Parameter
Marking BDP 952 BDP 954 BDP 956 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C
Package SOT223 SOT223 SOT223
Symbol VCEO VCBO VEBO
BDP952 80 100 5
BDP954 100 120 5
BDP956 Unit 120 140 5 V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
Rth JS
3 5 200 500 3 150 -65 ... 150
A m A W °C
Junction
- soldering point1)
17
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Jul-06-2001
BDP952...BDP956
Electrical Characteristics at TA = 25°C, unless...
