BF517 Datasheet | Infineon

BF 517 NPN Silicon RF Transistor For amplifier and oscillator 3 applications in TV-tuners 2 1 VPS05161 Type BF 517 Maximum Ratings Parameter Marking LRs 1=B Pin Configuration 2=E Symbol VCEO VCBO VEBO IC ICM Ptot Tj TA Tstg Package SOT-23 Value 15 20 2.5 25 50 280 150 -65 ... 150 -65 ... 150 m W °C m A Unit V 3=C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f 10 MHz Total power dissipation, TS 55 °C F) Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS 340 K/W 1T is measured on the collector lead at the soldering point to the pcb S Oct-26-1999 BF 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 15 V, IE = 0 DC current gain IC = 5 m A, VCE = 10 V Collector-emitter saturation voltage IC = 10 m A, IB = 1 m A VCEsat 0.1 0.5 h FE 25 250 ICBO 50 V(BR)CEO 15 typ. max. Unit V n A V AC characteristics Transition frequency IC = 5 m A, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 5 m A, VCE = 10 V, f = 100 MHz, ZS = 75 F 2.5 d B Cobs 0.8 Cibo 1.45 Cce 0.25 0.4 Ccb 0.3 0.55 0.75 p F f T 1 2 GHz Oct-26-1999 BF 517 Total power dissipation Ptot = f (TA - , TS ) - Package mounted on epoxy 300 m W TS P tot 0...