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BF999
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
3
preferably in FM applications
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package
BF999
Maximum Ratings Parameter
LBs
1=G
2=D
Symbol
3=S
Value
SOT23
Unit
Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS 76 °C Storage temperature Channel temperature
Thermal Resistance Channel - soldering point1)
VDS ID
20 30 10 200 -55 ... 150 150
V mA mA mW °C
IGSM
Ptot Tstg Tch
Rthchs
370
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-08-2002
BF999
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BF999 Datasheet
