BF999 - Silicon N-Channel MOSFET Triode

Infineon Technologies AG

Datasheet Details

Part number	BF999
Manufacturer	Infineon Technologies AG
File Size	133.97 KB
Description	Silicon N-Channel MOSFET Triode
Datasheet	BF999 Datasheet
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BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS 76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering point1) VDS ID 20 30 10 200 -55 ... 150 150 V mA mA mW °C IGSM Ptot Tstg Tch Rthchs 370 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-08-2002 BF999 Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Published: Mar 23, 2005 |