BF999 Description
BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! 150 150 V mA mA mW °C IGSM Ptot Tstg Tch Rthchs 370 K/W 1For calculation of R thJA please refer to Application Note 1 Nov-08-2002 BF999 at TA = 25 °C, unless otherwise specified.