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BFG 235
NPN Silicon RF Transistor
For low-distortion broadband output amplifier
4
stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA
Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 235
Maximum Ratings Parameter
Marking BFG235 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT-223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 15 25 25 2 300 40 2 150 -65 ... 150 -65 ...
BFG235 Datasheet
