BFP136 Datasheet | Infineon

BFP136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems f T = 5.5GHz Gold metalization for high reliability 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 150 20 1000 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 60°C 1) Junction temperature Ambient temperature Storage temperature m A m W °C Thermal Resistance Junction - soldering point 2) Rth JS 90 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 m A, VCE = 5 V h FE 50 100 200 IEBO 1 µA ICBO 50 n A ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit Jun-22-2001 BFP136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 80 m A, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 30 m A, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 80 m A, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz IC = 80 m A, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order...