BFP360
BFP360 is NPN Silicon RF Transistor manufactured by Infineon.
BFP360W
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 d Bm Low noise figure: 1.0 d B at 1.8 GHz
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP360W
Maximum Ratings Parameter
Marking Pin Configuration FBs 1=E 2=C 3=E 4=B Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol Rth JS
Package SOT343
Value Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150
Value
V m A m W °C
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction
- soldering point2)
260
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit
Collector-emitter breakdown voltage
IC = 1 m A, IB =...
