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NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package
BFS17W
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS17W
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Package SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature
VCEO VCBO VEBO IC ICM Ptot
TJ TA
15 25 2.5 25 50 280
150 -65 ... 150
Storage temperature
TStg -65 ...