BFS17W Datasheet | Infineon

NPN Silicon RF Transistor - For broadband amplifiers up to 1 GHz at collector currents from 1 m A to 20 m A - Pb-free (Ro HS pliant) package 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking Pin Configuration MCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature VCEO VCBO VEBO IC ICM Ptot TJ TA 15 25 2.5 25 50 280 150 -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering...