BG3230R Overview
Electrostatic discharge sensitive device, observe handling precaution! AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V g fs Cg1ss Cdss Gp Values typ.
BG3230R datasheet by Infineon.
| Part number | BG3230R |
|---|---|
| Datasheet | BG3230R_InfineonTechnologiesAG.pdf |
| File Size | 150.38 KB |
| Manufacturer | Infineon |
| Description | DUAL N-Channel MOSFET Tetrode |
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Electrostatic discharge sensitive device, observe handling precaution! AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V g fs Cg1ss Cdss Gp Values typ.
| Part Number | Description |
|---|---|
| BG3230 | DUAL N-Channel MOSFET Tetrode |
| BG3123 | DUAL N-Channel MOSFET Tetrode |
| BG3123R | DUAL N-Channel MOSFET Tetrode |
| BG3130 | DUAL N-Channel MOSFET Tetrode |
| BG3130R | DUAL N-Channel MOSFET Tetrode |
| BG3140 | DUAL N-Channel MOSFET Tetrode |
| BG3140R | DUAL N-Channel MOSFET Tetrode |