BG3230R Description
Electrostatic discharge sensitive device, observe handling precaution! AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V g fs Cg1ss Cdss Gp Values typ.
BG3230R is DUAL N-Channel MOSFET Tetrode manufactured by Infineon.
| Part Number | Description |
|---|---|
| BG3230 | DUAL N-Channel MOSFET Tetrode |
| BG3123 | DUAL N-Channel MOSFET Tetrode |
| BG3123R | DUAL N-Channel MOSFET Tetrode |
| BG3130 | DUAL N-Channel MOSFET Tetrode |
| BG3130R | DUAL N-Channel MOSFET Tetrode |
Electrostatic discharge sensitive device, observe handling precaution! AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V g fs Cg1ss Cdss Gp Values typ.