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BGA619 - The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology.
  • Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen compounds).
  • Low external component count.
  • Integrated output DC blocking capacitor, integrated RF choke on internal bias network.
  • Three gain steps.
  • Power off function.
  • High IP3 in all modes.

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Datasheet Details

Part number BGA619
Manufacturer Infineon Technologies AG
File Size 468.10 KB
Description The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier
Datasheet download datasheet BGA619 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen compounds) • Low external component count • Integrated output DC blocking capacitor, integrated RF choke on internal bias network • Three gain steps • Power off function • High IP3 in all modes Applications • Low Noise Amplifier for 1900 MHz PCS wireless frontends (CDMA 2000). Introduction The BGA619 is an easy-to-use, low-cost Low Noise Amplifier (LNA) MMIC designed for use in today’s PCS systems which require excellent linearity in each of several gain step modes.