Datasheet Details
| Part number | BGB540 |
|---|---|
| Manufacturer | Infineon |
| File Size | 129.68 KB |
| Description | A 35 dB Gain-Sloped LNB I.F. Amplifier |
| Datasheet | BGB540_InfineonTechnologiesAG.pdf |
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Overview: Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain ponents and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.
| Part number | BGB540 |
|---|---|
| Manufacturer | Infineon |
| File Size | 129.68 KB |
| Description | A 35 dB Gain-Sloped LNB I.F. Amplifier |
| Datasheet | BGB540_InfineonTechnologiesAG.pdf |
|
|
|
s and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
| Part Number | Description |
|---|---|
| BGB540 | Active Biased RF Transistor |
| BGB540LNA | BGB540 as a 1.85 GHz Low Noise Amplifier |
| BGB420 | Active Biased Transistor |