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BGX400
Silicon Switching Diodes
Switching applications High breakdown voltage Halfbridge rectifier
3
2 1
1 3 2
EHA07365
VPS05161
Type BGX400
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current
Marking GXs 1=C1/A2
Pin Configuration 2=C2 3=A1
Package SOT23
Symbol VR VRM IF IFS Ptot Tj Tstg
Value 400 400 250 2 250 150 -65 ... 150
Unit V mA A mW °C
Surge forward current, t = 1 ms Total power dissipation, TS = 71 °C Junction temperature Storage temperature
Thermal Resistance Junction - soldering point 1) RthJS
315
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BGX400
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BGX400 Datasheet
