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BGX50A
Silicon Switching Diode Array
Bridge configuration High-speed switching diode chip
3 4 2
2
1
VPS05178
3
1
4
EHA00007
Type BGX50A
Marking U1s
Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3
Package SOT143
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Symbol VR VRM IF Ptot Tj Tstg Value 50 70 140 210 150 65 ... 150 mA mW °C Unit V
Thermal Resistance Junction - soldering point 1) RthJS
360
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Jul-31-2001
BGX50A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min.
BGX50A Datasheet
