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BGX50A - Silicon Switching Diode Array

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Part number BGX50A
Manufacturer Infineon Technologies AG
File Size 39.74 KB
Description Silicon Switching Diode Array
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BGX50A Silicon Switching Diode Array  Bridge configuration  High-speed switching diode chip 3 4 2 2 1 VPS05178 3 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Symbol VR VRM IF Ptot Tj Tstg Value 50 70 140 210 150 65 ... 150 mA mW °C Unit V Thermal Resistance Junction - soldering point 1) RthJS  360 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BGX50A Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min.
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