BSC031N06NS3G - Power Transistor

Infineon Technologies AG

Key Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance RDS(on).
Superior thermal resistance.
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

BSC031N06NS3G power transistor by Infineon Technologies AG - Datasheet Preview

Datasheet Details

Part number	BSC031N06NS3G
Manufacturer	Infineon Technologies AG
File Size	320.15 KB
Description	Power Transistor
Datasheet	BSC031N06NS3G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSC031N06NS3 G Product Summary V DS R DS(on),max ID 60 3.