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BSO200N03S - OptiMOS2 Power-Transistor

General Description

and charts started herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • Fast switching MOSFET for SMPS.
  • Optimized technology for notebook DC/DC.
  • Qualified according to JEDEC for target.

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Datasheet Details

Part number BSO200N03S
Manufacturer Infineon Technologies AG
File Size 238.95 KB
Description OptiMOS2 Power-Transistor
Datasheet download datasheet BSO200N03S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSO200N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 20 8.8 V mΩ A P-DSO-8 Type BSO200N03S Package P-DSO-8 Ordering Code Q67042-S4212 Marking 200N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C3) I D=8.8 A, R GS=25 Ω I D=8.8 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 8.8 7.