BSP149 Datasheet | Infineon

SIPMOS® Small-Signal-Transistor Features - N-channel - Depletion mode - dv /dt rated Product Summary V DS R DS(on),max I DSS,min 200 3.5 0.14 V Ω A SOT-223 Type BSP149 Package SOT-223 Ordering Code Q67000-S071 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP149 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.66 A, V DS=160 V, di /dt =200 A/µs, T j,max=150 °C Value 0.66 0.53 2.6 Unit A Reverse diode dv /dt dv /dt 6 k V/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 P tot T j, T stg T A=25 °C 1.8 -55 ... 150 55/150/56 W °C Rev. 1.0 page 1 2003-04-03 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB R th JS R th JA minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=-3 V, I D=250 µA V GS(th) I D (off) V DS=3 V, I D=400 µA V DS=200 V, V GS=-3 V, T j=25 °C V DS=200 V, V GS=-3 V, T j=125 °C Gate-source leakage current Saturated drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=70 m A V GS=10 V, I D=660 m A |V DS|>2|I D|R DS(on)max, I D=0.48 A 200 -2.1 -1.4 -1 0.1 µA V 25 115 70 K/W Values typ. max. Unit - 1.7 1.0 5 10 3.5 1.8 n A m A Ω Transconductance g fs -...