BSP171P Datasheet | Infineon

SIPMOS® Small-Signal-Transistor Features - P-Channel - Enhancement mode - Logic level - Avalanche rated - dv /dt rated Product Summary V DS R DS(on),max ID -60 0.3 -1.9 V Ω A SOT-223 Type BSP 171 P Package SOT-223 Ordering Code Q67041-S4019 Marking 171P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.9 A, R GS=25 Ω I D=-1.9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C -1.9 -1.5 -7.6 70 m J A Unit Reverse diode dv /dt dv /dt -6 k V/µs Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg T A=25 °C1) ±20 1.8 -55 ... 150 55/150/56 V W °C Rev. 2.0 page 1 2004-01-20 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R th JS minimal footprint, steady state 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-1.5 A V GS=-10 V, I D=-1.9 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.5 A -60 -1 -1.5 -2 V 25 K/W Values typ. max. Unit R th JA - - - - Zero gate voltage drain current I...