• Part: BSP324
  • Description: SIPMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 108.21 KB
Download BSP324 Datasheet PDF
Infineon
BSP324
BSP324 is SIPMOS Power-Transistor manufactured by Infineon.
Rev. 1.0 SIPMOS ® Power-Transistor Feature - N-Channel - Enhancement mode - Logic Level - dv/dt rated Product Summary VDS RDS(on) ID 400 25 0.17 SOT-223 V Ω A Type BSP324 Package SOT-223 Ordering Code Q67000-S215 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP324 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C Value 0.17 0.14 0.68 6 ±20 Class 1 1.8 -55... +150 55/150/56 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot T j , Tstg Reverse diode d v/dt IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C k V/µs V W °C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-02-21 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance,...