Datasheet4U Logo Datasheet4U.com

BSP615S2L - OptiMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Datasheet Details

Part number BSP615S2L
Manufacturer Infineon Technologies AG
File Size 212.62 KB
Description OptiMOS Power-Transistor
Datasheet download datasheet BSP615S2L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSP615S2L OptiMOS Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 90 2.8 SOT 223 V mΩ A • Enhancement mode • Logic Level Type BSP615S2L Package SOT 223 Ordering Code Q67060-S7211 Marking 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 2.8 2.3 Unit A Pulsed drain current TA=25°C ID puls VGS Ptot Tj , Tstg 11 ± 20 1.8 -55... +150 55/150/00 V W °C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-29 BSP615S2L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, chip to ambient air: @ min.