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BSP615S2L - OptiMOS Power-Transistor

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number BSP615S2L
Manufacturer Infineon Technologies AG
File Size 212.62 KB
Description OptiMOS Power-Transistor
Datasheet download datasheet BSP615S2L Datasheet

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Full PDF Text Transcription

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BSP615S2L OptiMOS Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 90 2.8 SOT 223 V mΩ A • Enhancement mode • Logic Level Type BSP615S2L Package SOT 223 Ordering Code Q67060-S7211 Marking 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 2.8 2.3 Unit A Pulsed drain current TA=25°C ID puls VGS Ptot Tj , Tstg 11 ± 20 1.8 -55... +150 55/150/00 V W °C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-29 BSP615S2L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, chip to ambient air: @ min.
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