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BSS159N - SIPMOS Small-Signal-Transistor

General Description

and charts started herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • N-channel.
  • Depletion mode.
  • dv /dt rated Product Summary V DS R DS(on),max I DSS,min 60 8 0.13 V Ω A SOT-23 Type BSS159N Package SOT-23 Ordering Code Q67042-S1488 Tape and Reel Information E6327: 3000 pcs/reel Marking SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Value 0.23 0.

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Datasheet Details

Part number BSS159N
Manufacturer Infineon Technologies AG
File Size 221.94 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSS159N Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS159N SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated Product Summary V DS R DS(on),max I DSS,min 60 8 0.13 V Ω A SOT-23 Type BSS159N Package SOT-23 Ordering Code Q67042-S1488 Tape and Reel Information E6327: 3000 pcs/reel Marking SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Value 0.23 0.18 0.92 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.36 -55 ...