BTS130 Datasheet PDF (MOSFET) | Download Infineon Technologies AG BTS130

BTS130 - MOSFET

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Features

q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 130 VDS 50 V ID 27 A RDS(on) 0.05 Ω Package TO-220AB Ordering Code C67078-A5001-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source peak voltage, aperiodic Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit.

Datasheet Details

Part number	BTS130
Manufacturer	Infineon Technologies AG
File Size	468.52 KB
Description	MOSFET
Datasheet	BTS130 Datasheet
Additional preview pages of the BTS130 datasheet.

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Full PDF Text Transcription

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TEMPFET® BTS 130 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 130 VDS 50 V ID 27 A RDS(on) 0.05 Ω Package TO-220AB Ordering Code C67078-A5001-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source peak voltage, aperiodic Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 27 7.5 108 80 1200 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V VDS VDGR Vgs ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25° C Tj = – 55 ... + 150 ° C Short circuit dissipation, Tj = – 55 ...

Published: Apr 17, 2005 |