BTS132 Datasheet | Infineon

Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 132 60 V 24 A RDS(on) 0.065 Ω Package TO-220AB Ordering Code C67078-A5003-A4 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source peak voltage, aperiodic Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 ± 10 24 6.0 96 80 1200 75 - 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C - W A Unit V VDS VDGR Vgs VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 °C Tj = - 55 ... + 150 °C Short circuit dissipation, Tj = - 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA TEMPFET® BTS 132 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS - 2.0 - 2.5 VGS = 0, ID = 0.25 m A Gate threshold voltage VGS = VDS, ID = 1 m A Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.5 V, ID =12 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 12 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50...