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BTS3142D - Smart Lowside Power Switch

General Description

N channel vertical power FET in Smart SIPMOS ® technology.

Fully protected by embedded protection functions.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal shutdown.
  • Green product (RoHS compliant).
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current limitation.
  • Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 mΩ Nominal load current Clamping energy ID(Nom) EAS 4.6 A 3.5 J P / PG-TO252-3-11.

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Datasheet Details

Part number BTS3142D
Manufacturer Infineon Technologies AG
File Size 298.96 KB
Description Smart Lowside Power Switch
Datasheet download datasheet BTS3142D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Smart Low Side Power Switch Power HITFET BTS 3142D Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 mΩ Nominal load current Clamping energy ID(Nom) EAS 4.6 A 3.5 J P / PG-TO252-3-11 Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • μC compatible power switch for 12 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions.