BTS3142D Datasheet | Infineon

Features - Logic Level Input - Input Protection (ESD) - Thermal shutdown - Green product (Ro HS pliant) - Overload protection - Short circuit protection - Overvoltage protection - Current limitation - Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 mΩ Nominal load current Clamping energy ID(Nom) EAS 4.6 A 3.5 J P / PG-TO252-3-11 Application - All kinds of resistive, inductive and capacitive loads in switching or linear applications - μC patible power switch for 12 V DC applications - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions. Vbb HITFET ® In Pin 1 Gate-Driving Unit Current Limitation Overvoltage Protection Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS...