Datasheet Details
| Part number | BTS3410G |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 250.93 KB |
| Description | Smart Dual Lowside Power Switch |
| Datasheet |
 BTS3410G Datasheet
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General Description
N channel vertical power FET in Smart SIPMOSÒ technology.
Fully protected by embedded protection functions.
Key Features
- Logic Level Input.
- Input Protection (ESD).
- Thermal shutdown with auto restart.
- Green product (RoHS compliant).
- Overload protection.
- Short circuit protection.
- Overvoltage protection.
- Current limitation.
- Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 200 mW Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 mJ.