BTS3410G Datasheet | Infineon

Features - Logic Level Input - Input Protection (ESD) - Thermal shutdown with auto restart - Green product (Ro HS pliant) - Overload protection - Short circuit protection - Overvoltage protection - Current limitation - Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 200 m W Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 m J Application - All kinds of resistive, inductive and capacitive loads in switching or linear applications - µC patible power switch for 12 V DC applications - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Vbb HITFET â In1 Pin 2 Logic Channel 1 Drain1 Pin 7and 8 Source1 Pin 1 In2 Pin 4 Logic Channel 2 Drain2 Pin 5and 6 Source2 Pin 3 plete product spectrum and additional information http://.infineon./hitfet 1 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Symbol 1 S1 2 IN1 3 S2 4 IN2 5 D2 6 D2 7 D1 8...