BTS3410G Description
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. +150 0.8 150 50 2 Unit V mA °C W mJ V kV junction - ambient:.
BTS3410G Key Features
- Logic Level Input
- Input Protection (ESD)
- Thermal shutdown with auto restart
- Green product (RoHS pliant)
- Overload protection
- Short circuit protection
- Overvoltage protection
- Current limitation
- Analog driving possible
- All kinds of resistive, inductive and capacitive loads in switching or linear