BTS410E2 Description
N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. 2 IN Voltage source VLogic Voltage sensor ESD 4 ST Logic Overvoltage protection Current limit Gate protection + V bb 3 Charge pump Level shifter Rectifier Limit for unclamped ind.
BTS410E2 Key Features
- Overload protection
- Current limitation
- Short circuit protection
- Thermal shutdown
- Overvoltage protection (including load dump)
- Fast demagnetization of inductive loads
- Reverse battery protection1)
- Open drain diagnostic output
- Open load detection in ON-state
- CMOS patible input