Datasheet Details
| Part number | BTS410E2 |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 340.74 KB |
| Description | Smart High-Side Power Switch |
| Datasheet |
 BTS410E2 Datasheet
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General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Key Features
- Overload protection.
- Current limitation.
- Short circuit protection.
- Thermal shutdown.
- Overvoltage protection (including load dump).
- Fast demagnetization of inductive loads.
- Reverse battery protection1).
- Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
- Open drain diagnostic output.
- Open load detection in ON-state.
- CMOS compatible input.
- Loss of ground and loss of Vbb protection.
- Electrostatic discharge (ESD) p.