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BTS412B2 - Smart Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

Fully protected by embedded protection functions.

Key Features

  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • CMOS diagnostic output.
  • Open load detection in OFF-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb prote.

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Datasheet Details

Part number BTS412B2
Manufacturer Infineon Technologies AG
File Size 170.31 KB
Description Smart Highside Power Switch
Datasheet download datasheet BTS412B2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® BTS 412B2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • CMOS diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 mΩ 1.