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BTS442E2 - Smart Highside Power Switch

Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology.

Fully protected by embedded protection functions.

Features

  • Overload protection.
  • Current limitation.
  • Short-circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Open drain diagnostic output.
  • Open load detection in ON-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb.

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Datasheet preview – BTS442E2

Datasheet Details

Part number BTS442E2
Manufacturer Infineon Technologies AG
File Size 211.48 KB
Description Smart Highside Power Switch
Datasheet download datasheet BTS442E2 Datasheet
Additional preview pages of the BTS442E2 datasheet.

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Full PDF Text Transcription

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PROFET® BTS 442 E2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection2) • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ...
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