BTS5210G Datasheet | Infineon

Description - - N channel vertical power MOSFET with charge pump, ground referenced CMOS patible input and  diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications - - - - µC patible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions - - - - - - - Very low standby current CMOS patible input Improved electromagnetic patibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Protection Functions - - - - - - - - Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Block Diagram Vbb IN1 ST1 IN2 ST2 Logic Channel 1 Channel 2 Load 1 Load 2 Diagnostic Function - - - Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state Infineon Technologies AG 2003-Oct-01 BTS 5210G Functional diagram GND internal voltage supply IN1 ST1 logic gate control + charge pump current limit VBB clamp for inductive load OUT1 ESD temperature sensor Open load detection channel 1 reverse battery protection IN2 ST2 control and protection circuit equivalent to channel 1 OUT2 Infineon Technologies AG 2003-Oct-01 BTS 5210G Pin Definitions and...