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BTS707 - Smart Two Channel Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Key Features

  • Open drain diagnostic output.
  • Open load detection in OFF-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb protection.
  • Electrostatic discharge (ESD) protection 65 5.8 58 two parallel 125 2.8 V V mΩ A.
  • Reverse battery protection1).

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Datasheet Details

Part number BTS707
Manufacturer Infineon Technologies AG
File Size 304.54 KB
Description Smart Two Channel Highside Power Switch
Datasheet download datasheet BTS707 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® BTS 707 Smart Two Channel Highside Power Switch Product Summary Overvoltage Protection Vbb(AZ) • Overload protection • Current limitation Vbb(on) Operating voltage • Short-circuit protection active channels: one • Thermal shutdown On-state resistance RON 250 • Overvoltage protection 1.9 • Fast demagnetization of inductive loads Nominal load current IL(NOM) Features • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection 65 5.8 ... 58 two parallel 125 2.