BUP212 Datasheet | Infineon

Infineon IGBT BUP 212 - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Pin 1 G Type BUP 212 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 1200 Unit V Pin 2 C Ordering Code Q67040-A - Q67040-A4408 Pin 3 E Package TO-220 AB 1200V 22A VCE VEC VCGR RGE = 20 kΩ Gate-emitter voltage DC collector current VGE IC ± 20 A 22 8 TC = 25 °C TC = 110 °C Pulsed collector current, tp = 1 ms ICpuls 44 16 TC = 25 °C TC = 110 °C Avalanche energy, single pulse 10 m J IC = 8 A, VCC = 50 V, RGE = 25 Ω L = 300 µH, Tj = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group May-05-1997 Infineon Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 /...