BUZ325 Datasheet | Infineon

BUZ 325 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 Pin 2 Pin 3 Type RDS(on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 Ω TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 7.5 m H, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 ID 12.5 IDpuls 50 IAR EAR EAS 12.5 13 A m J 670 VGS Ptot 125 Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 °C ± 20 ≤1 75 E 55 / 150 / 56 K/W Semiconductor Group 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol...