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BUZ 325
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 325
400 V
12.5 A
0.35 Ω
TO-218 AA
C67078-S3118-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 7.5 mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
ID 12.5 IDpuls 50 IAR EAR EAS 12.
BUZ325 Datasheet
