• Part: BUZ61
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 149.32 KB
Download BUZ61 Datasheet PDF
Infineon
BUZ61
BUZ61 is Power Transistor manufactured by Infineon.
BUZ 61 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 Pin 2 Pin 3 Type VDS 400 V ID 12.5 A RDS(on) 0.4 Ω Package Ordering Code BUZ 61 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C A 12.5 Pulsed drain current TC = 25 °C IDpuls IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 m H, Tj = 25 °C 12.5 13 m J V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC...