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CFH120 - GaAs HEMT

Key Features

  • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 ________________________________________________________________________________________________________ ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped).

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Datasheet Details

Part number CFH120
Manufacturer Infineon Technologies AG
File Size 242.89 KB
Description GaAs HEMT
Datasheet download datasheet CFH120 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs HEMT Preliminary Datasheet Features • • • • • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 ________________________________________________________________________________________________________ ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CFH120-06 CFH120-08 CFH120-10 H5s H3s H4s Q62705-K0671 Q62705-K0603 Q62705-K0604 MW-4 MW-4 MW-4 Maximum Ratings Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Operating temperature Storage temperature range Total power dis