CFH120 - GaAs HEMT

Datasheet Summary

Features

low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 ________________________________________________________________________________________________________ ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped).

Infineon Technologies AG

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Datasheet Details

Part number	CFH120
Manufacturer	Infineon Technologies AG
File Size	242.89 KB
Description	GaAs HEMT
Datasheet	CFH120 Datasheet
Additional preview pages of the CFH120 datasheet.

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GaAs HEMT Preliminary Datasheet Features • • • • • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 ________________________________________________________________________________________________________ ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CFH120-06 CFH120-08 CFH120-10 H5s H3s H4s Q62705-K0671 Q62705-K0603 Q62705-K0604 MW-4 MW-4 MW-4 Maximum Ratings Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Operating temperature Storage temperature range Total power dis

Published: Mar 23, 2005 |