CLX27-10
CLX27-10 is HiRel X-Band GaAs Power-MESFET manufactured by Infineon.
CLX27 Hi Rel X-Band Ga As Power-MESFET
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- Hi Rel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 15 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 55 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/007, Type Variant No.s 04 to 06
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration 1 2 S 3 D
Package
CLX27-00 (ql) CLX27-05 (ql) CLX27-10 (ql)
- see below
MWP-25
CLX27-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702L119 on request on request Q62702L118
(see order instructions for ordering example)
Semiconductor Group
1 of 9
Draft D, September 99
CLX27
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current pression Level 1) Operation Range 1
Symbol VDS VDG VGS ID IG PC
Values 11 13 -6 420 5 1.5 at VDS ≤ 8 V 2.5 at VDS ≤ 7 V 3.5 at VDS ≤ 6 V
Unit V V V m A m A d B pression Level 2) Operation Range 2 pression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.:
5)
PC PC TJ Tstg Ptot Tsol
3.5 at VDS ≤ 6 V tbd. 175
- 65...+ 175 3.38 230 d B d B °C °C W °C
Rth JS
≤ 40
K/W
1) Operation Range 1: 80 m A ≤ ID ≤ 160 m A 2) Operation Range 2: ID > 160 m A 3) Operation Range 3: ID < 80 m A 4) At TS = + 40 °C. For TS > + 40 °C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group
2 of...