CLX32-05 Datasheet | Infineon

CLX32 Hi Rel X-Band Ga As Power-MESFET - - - - - - - Hi Rel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 12.5 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 54 % ponent Under Development, Package Modifications Foreseen ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLX32-00 (ql) CLX32-05 (ql) CLX32-10 (ql) - see below MWP-25 tbc. CLX32-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLX32 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current pression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 11 13 -6 1400 10 1.5 at VDS ≤ 8 V 2.5 at VDS ≤ 7 V 3.5 at VDS ≤ 6 V Unit V V V m A m A d B pression Level 2) Operation Range 2 pression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.: 5) PC PC TJ Tstg Ptot Tsol 3.5 at VDS ≤ 6 V tbd. 175 - 65...+ 175 5.4 230 d B d B °C °C W °C Rth JS ≤ 25 K/W 1) Operation Range 1: 270 m A ≤ ID ≤ 540 m A 2) Operation Range 2: ID > 540 m A 3) Operation Range 3: ID < 270 m A 4) At TS = + 40 °C. For TS > + 40 °C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September...