• Part: HYB25L256160AC
  • Description: 256-Mbit Mobile-RAM
  • Manufacturer: Infineon
  • Size: 1.11 MB
Download HYB25L256160AC Datasheet PDF
Infineon
HYB25L256160AC
description improved Page 19 “Simplified State Diagram” added Page 20 Page 20 relaxed Absolute Maximum Ratings (+0.5/- 0.7 V instead of ±0.3 V relative to VDD/VSS) Note 4: relaxed over-/underswing delta to 2.0 V Page 20ff deleted VDD and VDDQ range above tables and partly replaced by note “(Remended Operating Conditions unless otherwise noted)“ Page 22 PC133 replaced by - 7.5 Page 23f Page 41 table operating currents updated, symbols changed from ICC to IDD, value type “max.” added, IDD6 named “self refresh current”, IDD1 description (“Single bank access cycles”) updated t CK defined by Note 3 or set to infinity; Note 4: “assumed” replaced by “used” revised timing diagram SPT03919-4 Page 54 TFBGA package outline moved to end , added “tolerance ±0.1mm for length and width” We Listen to Your ments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. .. Please...