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IPP040N06N3G - Power-Transistor

Key Features

  • for sync. rectification, drives and dc/dc SMPS.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • N-channel, normal level.
  • Avalanche rated.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPP040N06N3G
Manufacturer Infineon Technologies AG
File Size 1.57 MB
Description Power-Transistor
Datasheet download datasheet IPP040N06N3G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G Product Summary V DS R DS(on),max (SMD) ID 60 3.