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Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Revolutionary semiconductor
SDT12S60
Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.
material - Silicon Carbide
Switching behavior benchmark No reverse recovery No temperature influence on
V nC A
the switching behavior
No forward recovery
Type SDT12S60
Package P-TO220-2-2.
Ordering Code Q67040-S4470
Marking D12S60
Pin 1 C
Pin 2 A
Pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp =10ms
Symbol IF I FRMS
Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.