SDT12S60 Description
Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor SDT12S60 Product Summary VRRM Qc IF 600 30 12 P-TO220-2-2. material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on V nC A the switching behavior No forward recovery Type SDT12S60 Package P-TO220-2-2. 1.7 62 K/W , at T j = 25 °C, unless otherwise...