SEMB3 Datasheet | Infineon

PNP Silicon Digital Transistor Preliminary data - Switching circuit, inverter, interface circuit, driver circuit - Two ( galvanic) internal isolated Transistors with good matching in one package - Built in bias resistor ( R1 = 4.7kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB3 Maximum Ratings Parameter Marking WS Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 15 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance m A m W °C Junction - soldering point 1) Rth JS ≤ 300 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Feb-26-2004 Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 m A, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 0.5 m A Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 m A, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 m A, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 f T 200 - Unit max. 100 630 0.3 0.8 1.1 6.2 kΩ MHz p F typ. 4.7 V(BR)CEO V(BR)CBO V(BR)EBO ICBO h FE VCEsat Vi(off) Vi(on) R1 50 50 5 120 0.4 0.5 3.2 V n A V 1) Pulse test: t < 300µs; D < 2% Feb-26-2004 DC Current Gain h FE = f (I C) VCE = 5V (mon emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), h FE = 20 10...