SEMD48 Datasheet | Infineon

NPN/PNP Silicon Digital Transistor Array Preliminary data - Switching circuit, inverter, interface circuit, driver circuit - Two (galvanic) internal isolated NPN/PNP Transistors in one package - Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1= 2.2kΩ, R2 = 47kΩ Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 C1 6 B2 5 E2 4 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD48 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Emitter-base voltage Input on voltage Input on voltage DC collector current DC collector current Junction temperature Storage temperature NPN PNP NPN PNP NPN PNP Total power dissipation, TS = 75 °C Marking WT Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO VEBO Vi(on) Vi(on) IC IC Ptot Tj Tstg Value 50 50 10 5 50 10 70 100 250 150 -65...+150 Unit V m A m W °C Feb-26-2004 Thermal Resistance Junction - soldering point1) Rth JS ≤ 300 K/W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics for NPN Type Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 2) IC = 5 m A, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 m A, IB = 0.5 m A Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 m A, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 32 0.9 47 1 62 1.1 kΩ Vi(on) 1 3 Vi(off) 0.8 1.5 VCEsat 0.3 V h FE 70 IEBO 164 µA ICBO 100 n A V(BR)CBO 50 V(BR)CEO 50 V Symbol min. Values typ. max. Unit AC Characteristics for NPN Type Transition frequency IC = 10 m A, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R th...