SEMD6 Datasheet | Infineon

NPN/PNP Silicon Digital Transistor Array Preliminary data - Switching circuit, inverter, interface circuit, driver circuit - Two (galvanic) internal isolated NPN/PNP Transistors in one package - Built in bias resistor (R1=4.7kΩ) Tape loading orientation C1 B2 5 E2 4 4 5 3 6 1 2 Top View 3 2 1 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side R1 TR1 R1 TR2 4 5 6 Direction of Unreeling Type SEMD6 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) 1For calculation of R th JA please refer to Application Note Thermal Resistance 1 E1 2 B1 3 C2 EHA07290 Marking W2 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 15 100 250 150 -65 ... 150 Unit V m A m W °C Rth JS ≤ 300 K/W Feb-26-2004 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 m A, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 0.5 m A Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 m A, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 m A, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 f T 150 R1 3.2 4.7 6.2 Vi(on) 0.5 1.1 Vi(off) 0.4 0.8 VCEsat 0.3 h FE 120 630 ICBO 100 V(BR)EBO 10 V(BR)CBO 50 V(BR)CEO 50 typ. max. Unit V n A V kΩ MHz p F 1) Pulse test: t < 300µs; D <...