SEMH1 Datasheet | Infineon

NPN Silicon Digital Transistor Array Preliminary data - Switching circuit, inverter, interface circuit, driver circuit - Two ( galvanic) internal isolated Transistors with good matching in one package - Built in bias resistor (R1=22kΩ, R2 =22kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH1 Maximum Ratings Parameter Marking WD Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 10 30 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) m A m W °C Rth JS ≤ 300 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Feb-25-2004 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 A Collector-base breakdown voltage IC = 10 µA, IE = 0 A Emitter-base breakdown voltage IE = 10 µA, IC = 0 A Collector cutoff current VCB = 40 V, IE = 0 A Emitter cutoff current VEB = 10 V, IC = 0 A DC current gain 1) IC = 5 m A, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 0.5 m A Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 m A, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 15 0.9 22 1 29 1.1 Vi(on) 1 2.5 Vi(off) 0.8 1.5 VCEsat 0.3 h FE 50 IEBO 350 ICBO 100 V(BR)EBO V(BR)CEO V(BR)CBO 50 50 typ. max. Unit V n A µA V kΩ - AC Characteristics Transition frequency IC = 10 m A, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 p F f T 130 MHz 1) Pulse test: t < 300µs; D < 2% Feb-25-2004 DC Current Gain h FE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (mon emitter configuration) 10 3 VCEsat = f (IC), h FE = 20 10 2 m...