SGB04N60
SGP04N60, SGD04N60,
Fast IGBT in NPT-technology
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGB04N60 SGU04N60
P-TO-251-3-1 (I-PAK) (TO-251AA)
P-TO-252-3-1 (D-PAK) (TO-252AA)
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP04N60 SGB04N60 SGD04N60 SGU04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C...
