SGB07N120
SGP07N120 SGB07N120
Fast IGBT in NPT-technology
- 40lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP07N120 SGB07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 8A
Eoff 0.7m...
