SKW10N60A Datasheet | Infineon

SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 s - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 PG-TO-247-3 - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1 for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP10N60A SKW10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150C K10N60 PG-TO-220-3-1 600V 10A 2.3V 150C K10N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax...