SMBT3906S
PNP Silicon Switching Transistors
- High DC current gain: 0.1 m A to 100 m A
- Low collector-emitter saturation voltage
- For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good matching in one package
- plementary types: SMBT3904...MMBT3904 (NPN)
- SMBT3906S/ U: for orientation in reel see package information below
- Pb-free (Ro HS pliant) package
- Qualified according AEC Q101
SMBT3906...MMBT3906
Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U
Marking
Pin Configuration
Package s2A 1=B 2=E 3=C
- -
- SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation TS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115°C, SOT363, MMBT3906S TS ≤ 107°C, SC74, MMBT3906U Junction temperature Storage temperature
Symbol VCEO VCBO VEBO IC Ptot
Tj Tstg
Value 40 40 6 200
330 250 330 150 -65 ......
