SMBT5087
PNP Silicon Transistor
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15k Hz
2 1
Pin Configuration
VPS05161
Type SMBT5087
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation TS = 71 °C Junction temperature Storage temperature
Marking s2Q
1=B
2=E
3=C
Package SOT23
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg
Value 50 50 3 50 330 150 -65 ... 150
Unit V m A m W °C
Thermal Resistance Parameter Junction
- soldering point1) Symbol Rth JS Value Unit K/W
240
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base...
