SMBTA42M
NPN Silicon High-Voltage Transistor
High breakdown voltage Low collector-emitter saturation voltage plementary type: SMBTA92M (PNP)
4 5 3 2 1
VPW05980
Type SMBTA42M
Maximum Ratings Parameter
Marking s1D 1=B
Pin Configuration 2=C 3=E
Package
4=n.c. 5 = C SCT595
Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg
Value 300 300 6 500 100 1.5 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS 83 °C Junction temperature Storage temperature m A W °C
Thermal Resistance Junction
- soldering point 1) Rth JS
45
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE...
